| 发明名称 |
Elongated Magnetoresistive Tunnel Junction Structure |
| 摘要 |
A Magnetoresistive Tunnel Junction (MTJ) device includes an elongated MTJ structure formed onto a substrate, the MTJ structure including a magnetic reference layer and a tunnel barrier layer. The MTJ device also includes a number of discrete free magnetic regions disposed onto the tunnel barrier layer. The ratio of length to width of the elongated MTJ structure is such that the magnetic field of the magnetic reference layer is pinned in a single direction. |
| 申请公布号 |
US2014252513(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313791983 |
申请日期 |
2013.03.09 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Yu Chwen;Cheng Kai-Wen;Chiang Tien-Wei;Chen Dong Cheng |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Magnetoresistive Tunnel Junction (MTJ) device comprising:
an elongated MTJ structure formed onto a substrate, the MTJ structure comprising:
a magnetic reference layer;a tunnel barrier layer; and a number of discrete free magnetic regions disposed onto the tunnel barrier layer; wherein a ratio of length to width of the elongated MTJ structure is such that the magnetic field of the magnetic reference layer is pinned in a single direction, and wherein the MTJ device is without an anti-ferromagnetic pinning layer. |
| 地址 |
Hsin-Chu TW |
