| 发明名称 |
Metal-Oxide-Semiconductor Field-Effect Transistor with Extended Gate Dielectric Layer |
| 摘要 |
A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain in the substrate, a gate electrode disposed over the substrate between the source and drain, and a gate dielectric layer disposed between the substrate and the gate electrode. At least a portion of the gate dielectric layer is extended beyond the gate electrode toward at least one of the source or the drain. |
| 申请公布号 |
US2014252499(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313790811 |
申请日期 |
2013.03.08 |
| 申请人 |
Ltd. Taiwan Semiconductor Manufacturing Company, |
发明人 |
Lin Shiuan-Jeng;Cheng Shyh-Wei;Chu Che-Jung |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal-oxide-semiconductor field-effect transistor (MOSFET), comprising:
a substrate; a source in the substrate; a drain in the substrate; a gate electrode disposed over the substrate between the source and the drain; and a gate dielectric layer disposed between the substrate and the gate electrode, wherein at least a portion of the gate dielectric layer extends beyond the gate electrode toward at least one of the source or the drain. |
| 地址 |
US |
