METHOD FOR MANUFACTURING THIN FILM FOR INFRARED SENSOR FOR MICROBOLOMETER

摘要

The present invention relates to a method for manufacturing an infrared detection thin film for a microbolometer. The purpose of the present invention is to provide a method for manufacturing an infrared detection thin film for a microbolometer which can manufacture a thin film with excellent reproducibility and large resistance variation (TCR) according to the temperature of a microbolometer infrared detection device. To achieve this purpose, the present invention includes a process (a) of depositing an insulating layer on a Si substrate; a process (b) of depositing a multilayered thin film by alternating a vanadium oxide (Vox) and zinc oxide (ZnO) on the insulating layer; a process (c) of performing a thermal process on the deposited multilayered thin film.