发明名称 Copper alloy for electronic/electric device, copper alloy thin plate for electronic/electric device, method for manufacturing copper alloy for electronic/electric device, and conductive part and terminal for electronic/electric device
摘要 <p>Provided is a copper alloy comprising, by mass%, Zn at greater than 2.0% and 36.5% or less, Sn at 0.1% to 0.9%, Ni at 0.05% or more and less than 1.0%, Fe at 0.001% or more and less than 0.10%, P at 0.005% to 0.10%, and the remainder including Cu and inevitable impurities, wherein in atomic ratio, 0.002≤Fe/Ni<1.5, 3<(Ni+Fe)/P<15, and 0.3<Sn/(Ni+Fe)<5 are satisfied as the content ratio of the elements, the average particle size ofα-phase crystal particles including Cu, Zn and Sn is 0.1 to 50 µm, and a deposit comprising Fe and/or Ni and P is included.</p>
申请公布号 AU2013207042(A2) 申请公布日期 2014.09.11
申请号 AU20130207042 申请日期 2013.01.04
申请人 MITSUBISHI SHINDOH CO., LTD.;MITSUBISHI MATERIALS CORPORATION 发明人 MAKI, KAZUNARI;MORI, HIROYUKI
分类号 C22C9/04;C22F1/00;C22F1/08;H01B1/02;H01B5/02;H01B13/00 主分类号 C22C9/04
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