| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves enhancement of breakdown resistance and a low loss (low on-resistance and low saturation voltage).SOLUTION: A semiconductor device includes: a first high-resistance base layer 2 of a first conductivity type; a collector layer 14 of a second conductivity type; a second base layer 16 of the second conductivity type; an emitter layer 13 of the first conductivity type; a gate electrode 8 which extends in a first direction and is formed through a gate insulating film 6 in a trench that passes through the emitter layer and the second base layer and reaches the halfway depth of the first base layer; a collector electrode 20; and an emitter electrode 24 provided in the emitter layer and the second base layer. The emitter layer includes: a first emitter layer 13-1 arranged along the trench in a first direction; and a second emitter layer 13-2 arranged in a second direction so that the first emitter layers are connected to each other in a ladder shape. A base contact layer 4 having impurity density higher than that of the second base layer of the second conductivity type is arranged so as to surround the second emitter layer.</p> |
