| 摘要 |
A light emitting device (10) comprises a first body (12) of an indirect bandgap semiconductor material. A junction region (118) in the body is formed between a first region (112.1) of the body of a first doping kind and a second region (112.2) of the body of a second doping kind. A terminal arrangement is connected to the first and second regions of the body for, in use, reverse biasing the junction region into avalanche or field emission mode to inject carriers into the first junction region. A second body (122) of an isolation material is located immediately adjacent at least two of a top wall, a bottom wall, and sidewalls of the first region, thereby to reduce parasitic injection from the first region. |
