| 摘要 |
PROBLEM TO BE SOLVED: To provide a workpiece polishing apparatus which can control accurately the polishing amount of a circular workpiece requiring high flatness, e.g. a semiconductor wafer.SOLUTION: In a method of polishing simultaneously the front and back surfaces of a workpiece, e.g. a wafer, held with a carrier plate including one or more holding holes with at least one of them arranged eccentrically, the temperature of the carrier plate is measured, and the polishing amount of the workpiece is controlled on the basis of changes of the phase and/or the amplitude calculated from the measured temperature changes of the carrier plate. |
