DRIVER FOR NORMALLY ON III-NITRIDE TRANSISTORS TO GET NORMALLY-OFF FUNCTIONALITY

摘要

A semiconductor device includes a depletion mode GaN FET and an integrated driver/cascode IC. The integrated driver/cascode IC includes an enhancement mode cascoded NMOS transistor which is connected in series to a source node of the GaN FET. The integrated driver/cascode IC further includes a driver circuit which conditions a gate input signal and provides a suitable digital waveform to a gate node of the cascoded NMOS transistor. The cascoded NMOS transistor and the driver circuit are formed on a same silicon substrate.

主权项

1. A semiconductor device, comprising:
a depletion mode gallium nitride field effect transistor (GaN FET); and an integrated driver/cascode integrated circuit (IC), comprising:
an enhancement mode cascoded n-channel metal oxide semiconductor (NMOS) transistor; anda driver circuit, said driver circuit and said enhancement mode cascoded NMOS transistor being disposed in a same silicon substrate; in which:
a drain node of said GaN FET is connected to a drain terminal of said semiconductor device;a source node of said GaN FET is connected to a drain node of said enhancement mode cascoded NMOS transistor;a gate node of said enhancement mode cascoded NMOS transistor is connected to said driver circuit; anda gate terminal of said semiconductor device is connected to said driver circuit.