SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device having a substrate; a plurality of pillar structures, wherein each pillar structure includes an active pillar disposed over the substrate; a gate electrode surrounding an outer wall of the active pillar; an interlayer dielectric (ILD) layer insulating adjacent pillar structures; a gate contact penetrating the ILD layer and configured to connect to a sidewall of the gate electrode; and a word line connected to the gate contact.

主权项

1. A semiconductor device, comprising:
a substrate; a plurality of pillar structures, each pillar structure including an active pillar disposed over the substrate; a gate electrode surrounding an outer wall of the active pillar; an interlayer dielectric (ILD) layer insulating adjacent pillar structures; a gate contact penetrating the ILD layer and connected to a sidewall of the gate electrode; and a word line connected to the gate contact.