Ball Amount Process in the Manufacturing of Integrated Circuit

摘要

An integrated circuit structure includes a semiconductor substrate, a metal pad over the semiconductor substrate, a passivation layer including a portion over the metal pad, a polymer layer over the passivation layer, and a Post-Passivation Interconnect (PPI) over the polymer layer. The PPI is electrically connected to the metal pad. The PPI includes a PPI line have a first width, and a PPI pad having a second width greater than the first width. The PPI pad is connected to the PPI line. The PPI pad includes an inner portion having a first thickness, and an edge portion having a second thickness smaller than the first thickness.

主权项

1. An integrated circuit structure comprising:
a semiconductor substrate; a metal pad over the semiconductor substrate; a passivation layer comprising a portion over the metal pad; a polymer layer over the passivation layer; and a Post-Passivation Interconnect (PPI) over the polymer layer, wherein the PPI is electrically connected to the metal pad, wherein the PPI comprises:
a PPI line have a first width; anda PPI pad having a second width greater than the first width, wherein the PPI pad is connected to the PPI line, and wherein the PPI pad comprises an inner portion having a first thickness, and an edge portion having a second thickness smaller than the first thickness.