Method of operating memory controller, memory controller, memory device and memory system

摘要

A method of operating a memory controller, a memory controller, a memory device and a memory system are provided. The method includes reading first data from a nonvolatile memory device using a first read voltage, the first data includes a uncorrectable error bit, reading second data from a nonvolatile memory device using a second read voltage different from the first read voltage, the second data includes an correctable error bit, and reprogramming the nonvolatile memory device according to the comparison result of the first read voltage and the second read voltage.

主权项

1. A method of operating a memory controller, comprising:
reading, as first data, data stored in a nonvolatile memory do vice using a first read voltage, the first data including an uncorrectable error bit; reading, as second data, the data stored in the nonvolatile memory device using a second read voltage different from the first read voltage, the second data including a correctable error bit; and reprogramming the stored data in the nonvolatile memory device based on a comparison result of the first read voltage and the second read voltage, wherein the first data is stored in a first block including a first page corresponding to a first page address Of the nonvolatile memory device, the second data is stored in a second block including a second page corresponding to a second page address of the nonvolatile memory device, and the first page address and the second page address are a same page address.