Configuration and method to generate saddle junction electric field in edge termination

摘要

This invention discloses a semiconductor power device disposed in a semiconductor substrate and having an active cell area and an edge termination area the edge termination area wherein the edge termination area comprises a superjunction structure having doped semiconductor columns of alternating conductivity types with a charge imbalance between the doped semiconductor columns to generate a saddle junction electric field in the edge termination.

主权项

1. A semiconductor power device disposed in a semiconductor substrate and having an active cell area and an edge termination area wherein:
the edge termination area comprises a superjunction structure having doped semiconductor columns of alternating conductivity types with an electric charge imbalance between the doped semiconductor columns to create a net P type doping in the termination region and to generate a saddle junction electric field in the edge termination; and the doped semiconductor columns comprise P-columns and N-columns and the super-junction structure is formed in a P-type epitaxial layer having a wide P-gap disposed in a middle of a P-column.