Solid-state imaging device, manufacturing method thereof, electronic apparatus, and semiconductor device

摘要

A solid-state imaging device includes a semiconductor layer where a pixel is formed in a pixel region and a semiconductor element is formed in a side opposite to where incident light is incident, a wiring layer provided on the semiconductor layer to cover the semiconductor element, a support substrate provided to oppose the wiring layer in a wiring layer surface opposite to the semiconductor layer, and an adhesion layer which adheres the wiring layer and the support substrate, where the wiring layer includes a pad electrode and an opening is formed so the pad electrode is exposed, a convex section is provided where the pad electrode is formed in at least a wiring layer surface opposing the support substrate or a support substrate surface opposing the wiring layer, and the adhesion layer is formed thinner at the formation portion of the pad electrode than a portion of the pixel region.

主权项

1. An electronic apparatus comprising:
an optical system arranged such that light is concentrated toward an imaging surface of a solid-state imaging device, the solid state imaging device comprising:
a semiconductor layer including a photoelectric conversion element formed in a pixel region and a semiconductor element formed in a surface side opposite to a surface through which light enters;a wiring layer provided over a surface of the semiconductor layer so as to cover the semiconductor element;a support substrate provided over the wiring layer at an opposite side of the semiconductor layer;a bonding layer provided between the wiring layer and the support substrate, wherein the wiring layer includes a pad electrode and an opening formed so that a surface of the pad electrode is exposed; andfirst and second convex sections provided in a region where the pad electrode is formed, the first convex section provided at a surface of the wiring layer which opposes the support substrate and the second convex section provided at a surface of the support substrate which opposes the wiring layer, wherein the first and second convex sections are formed between a portion of the pad electrode and the support substrate.