发明名称 Gate driving circuit and display apparatus using the same
摘要 A gate driving circuit includes a plurality of stages, each stage including an input unit to determine a level of voltage to input to a first node based on the first and second input signals and the first clock signal that is input according to the level of the voltage input to the first node and a first gate-off voltage that is input in response to the second clock signal, a second driving unit outputting the gate signals based on the third clock signal input according to the voltage input to the first node and a second gate-off voltage input in response to the second clock signal, and a leakage blocking unit blocking leakage current of a transistor by maintaining a level of voltage input to a third node connected to the first node via at least one transistor.
申请公布号 US8830156(B2) 申请公布日期 2014.09.09
申请号 US201213596496 申请日期 2012.08.28
申请人 Samsung Display Co., Ltd. 发明人 Kim Cheol-Min;Pak Sang-Jin;Bae Min-Seok
分类号 G09G3/36;G11C19/00 主分类号 G09G3/36
代理机构 Lee & Morse, P.C. 代理人 Lee & Morse, P.C.
主权项 1. A gate driving circuit, comprising: a plurality of stages configured to output gate signals in response to first and second input signals and in response to first through third clock signals input to the plurality of stages, wherein each of the plurality of stages includes: an input unit configured to determine a level of voltage to be input to a first node based on the first input signal as a carry signal input from a previous stage and the second input signal as a carry signal input from a next stage;a first driving unit configured to output carry signals to the next stage, the carry signals being based on the first clock signal that is input according to the level of the voltage input to the first node and a first gate-off voltage that is input in response to the second clock signal;a second driving unit configured to output the gate signals based on the third clock signal that is input according to the level of the voltage input to the first node and a second gate-off voltage that is input in response to the second clock signal; anda leakage blocking unit configured to block leakage current of a transistor by maintaining a level of voltage input to a third node connected to the first node via at least one transistor.
地址 Yongin, Gyeonggi-Do KR