| 发明名称 | Optoelectronic device having an embedded electrode | ||
| 摘要 | An optoelectronic device including a first electrode arranged on a substrate, a second electrode that includes a first surface facing the first electrode, and a semiconductor material layer that is in electric contact with the first and second electrodes. The second electrode includes a side wall that is adjacent to the first surface and is covered with the semiconductor material layer by the insertion of a self-assembled monolayer. | ||
| 申请公布号 | US8829506(B2) | 申请公布日期 | 2014.09.09 |
| 申请号 | US201113699954 | 申请日期 | 2011.05.24 |
| 申请人 | Commissariat a l'Energie Atomique et aux Energies Alternatives | 发明人 | Laurent Jean-Yves;Verilhac Jean-Marie |
| 分类号 | H01L35/24;H01L51/42;H01L51/44;H01L51/50;H01L51/52 | 主分类号 | H01L35/24 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. An optoelectronic device comprising: a substrate, a first electrode arranged on the substrate, a second electrode comprising a first surface facing the first electrode, and a side wall adjacent to the first surface, an electrically insulating layer covering the first surface of the second electrode, and a layer of a semiconductor material in electric contact with the first electrode and the electrically insulating layer and covering the side wall of the second electrode by the insertion of a self-assembled monolayer. | ||
| 地址 | Paris FR | ||