Ditches near semiconductor fins and methods for forming the same

摘要

A device includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate. A semiconductor strip is between and contacting the isolation regions. A semiconductor fin overlaps, and is joined to, the semiconductor strip. A ditch extends from a top surface of the isolation regions into the isolation regions, wherein the ditch adjoins the semiconductor fin.

主权项

1. A device comprising:
a semiconductor substrate; isolation regions extending into the semiconductor substrate; a semiconductor strip between and contacting the isolation regions; and a semiconductor fin overlapping and joined to the semiconductor strip, wherein a ditch extends from a top surface of the isolation regions into the isolation regions, and wherein the ditch adjoins the semiconductor fin.