发明名称 |
Thin film structure with controlled lateral thermal spreading in the thin film |
摘要 |
An apparatus includes a non-metallic interlayer between a magnetic data storage layer and a heat sink layer, wherein interface thermal resistance between the interlayer and the heat sink layer is capable of reducing heat flow between the heat sink layer and the magnetic data storage layer. The apparatus may be configured as a thin film structure arranged for data storage. The apparatus may also include thermal resistor layer positioned between the interlayer and the heat sink layer. |
申请公布号 |
US8830629(B2) |
申请公布日期 |
2014.09.09 |
申请号 |
US201314060187 |
申请日期 |
2013.10.22 |
申请人 |
Seagate Technology LLC |
发明人 |
Hohlfeld Julius Kurt;Lu Bin;Ju Ganping;Itagi Amit V.;Klemmer Timothy;Peng Yingguo;Kubota Yukiko |
分类号 |
G11B5/33;G11B5/73;G11B11/105;G11B5/31;G11B5/66;G11B5/00 |
主分类号 |
G11B5/33 |
代理机构 |
Hollingsworth Davis, LLC |
代理人 |
Hollingsworth Davis, LLC |
主权项 |
1. An apparatus, comprising:
a magnetic data storage layer; a heat sink layer; and an interlayer between the magnetic data storage layer and the heat sink layer, the interlayer configured to facilitate a first heat flow from the magnetic data storage layer to the heat sink layer and a second heat flow from the heat sink layer to the magnetic data storage layer, wherein a rate of the first heat flow is greater than a rate of the second heat flow. |
地址 |
Cupertino CA US |