Manufacturing a semiconductor light emitting device using a trench and support substrate

摘要

A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

主权项

1. A method for manufacturing a semiconductor light emitting device, the method comprising:
forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate; forming a trench in a portion of a first surface of the light emitting structure to divide the light emitting structure into individual light emitting structures, the trench having a depth such that the growth substrate is not exposed; forming an insulating layer on an inner surface of the trench; providing a support substrate on the first surface of the light emitting structure following the forming of the insulating layer; separating the growth substrate from the light emitting structure; and cutting the light emitting structure into individual semiconductor light emitting devices by performing steps of:
etching a portion of a second surface of the light emitting structure opposite to the first surface corresponding to a position of the trench to expose the insulating layer through the second surface; andcutting the support substrate in the exposed portion of the insulating layer.