ZINC OXIDE-BASED SPUTTERING TARGET, PRODUCTION METHOD THEREOF, AND THIN FILM TRANSISTOR HAVING CUT-OFF FILM VAPOR-DEPOSITED BY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor having a cut-off film capable of applying etching simultaneously thereto without a different additional step in an etching step for patterning copper, and suppressing diffusion of copper to another layer or a reaction thereof.SOLUTION: A zinc oxide-based sputtering target includes a sintered body containing zinc oxide doped with indium oxide at the weight ratio of zinc oxide versus indium oxide of 99-50 wt.%: 1-50 wt.%, and a backing plate bonded to the back face of the sintered body, for supporting the sintered body. A production method thereof, and a thin film transistor having a cut-off film vapor-deposited therethrough are also provided.