ITO SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an ITO sputtering target capable of forming an ITO transparent conductive film having a content of Sn further increased, and a method for manufacturing the same.SOLUTION: The ITO sputtering target is a sintered body obtained by sintering a mixture containing a Sn oxide of 20-80wt% and the remainder consisting of an In oxide at a temperature of 800-1000°C under a pressure of more than 100 Kgf/cmand 500 Kgf/cmor less in non-oxidative atmosphere and has a structure dispersed and distributed by a Sn-oxide phase and an In oxide phase and a relative density of 90% or more. The In oxide and the Sn oxide are powders having an average particle size of 0.1-0.4μm. The ITO sputtering target is formed on the basis of the obtained sintered body.