发明名称 LIGHT-EMITTING DIODE CHIP WITH A METAL REFLECTIVE LAYER, THROUGH CONTACT, TUNNEL CONTACT AND A CHARGE CARRIER CONTACT
摘要 <p>The invention relates to a light-emitting diode chip comprising a series of layers (10) provided with at least one n-type conductivity layer. Said light-emitting diode chip comprises a reflective layer that is connected in a conductive manner to the n-type conductivity layer. At least one transparent dielectric layer is arranged between the n-type conductivity layer and the reflective layer.</p>
申请公布号 KR20140108341(A) 申请公布日期 2014.09.05
申请号 KR20147022923 申请日期 2008.01.17
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 SABATHIL MATTHIAS;HOPPEL LUTZ;EICHLER CHRISTOPH;ENGL KARL;PETER MATTHIAS;STRASSBURG MARTIN
分类号 H01L33/10;H01L33/20;H01L33/38;H01L33/40;H01L33/44 主分类号 H01L33/10
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