| 摘要 |
PURPOSE: An organic thin film transistor and method for fabricating the same are provided to improve the contact property with the various organic semiconductors through the copper oxide film and SAM(self assembly monolayer) formation. CONSTITUTION: The gate electrode(103) is formed on the lower plate(101). The gate insulating layer(105) is formed on the lower plate including the gate electrode. The organic semiconductor layer(107) is formed on the gate insulating layer. The source electrode(109a) and drain electrode(109b) are made of the copper layer arranged in the gate electrode both side. The organic semiconductor layer is formed on the gate insulating layer including the source electrode and drain electrode. The copper layer is formed of 200~3000Åthickness. |
