发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a word line, a bit line, a power supply node, a memory element that includes at least first and second regions that form a PN junction between the bit lie and the power supply node, and a third region that forms a PN junction with the second region and a capacitor that includes a first electrode provided independently from the second region of the memory element and electrically connected to the second region of the memory element, and a second electrode connected to the word line. |
申请公布号 |
US2014247651(A1) |
申请公布日期 |
2014.09.04 |
申请号 |
US201414275103 |
申请日期 |
2014.05.12 |
申请人 |
Tsukada Shuichi;Uchiyama Yasuhiro |
发明人 |
Tsukada Shuichi;Uchiyama Yasuhiro |
分类号 |
G11C11/39;G11C11/4091;G11C11/40 |
主分类号 |
G11C11/39 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a word line; a bit line; a power supply node; a memory element that comprises at least first and second regions that form a PN junction between said bit line and said power supply node, and a third region that forms a PN junction with said second region; and a capacitor that comprises a first electrode provided independently from said second region of said memory element and electrically connected to said second region of said memory element, and a second electrode connected to said word line. |
地址 |
Tokyo JP |