METHOD OF FABRICATING NITRIDE SUBSTRATE

摘要

Embodiments of the invention provide a method of fabricating a nitride substrate. The method includes preparing a growth substrate; forming a sacrificial layer on the growth substrate, the sacrificial layer including an indium (In)-containing nitride horizontal etching layer and an upper nitride sacrificial layer disposed on the nitride horizontal etching layer; partially etching the sacrificial layer, the partially etching the sacrificial layer including horizontal etching of the nitride horizontal etching layer; forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE); and separating the nitride epitaxial layer from the growth substrate, wherein the nitride epitaxial layer is separated from the growth substrate in the nitride horizontal etching layer.