SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a semiconductor substrate. A through hole penetrates the semiconductor substrate to be extended. A first insulating layer covers the upper surface of the semiconductor substrate and includes an opening part which is communicated with the through hole. An insulation film covers the wall side of the through hole and the opening part. A through electrode is formed in the through hole and the opening part. A first connection terminal includes an electroless plating metal layer formed on the end surface of the through electrode and the insulation film. The diameter of the first connection terminal is greater than that of the through electrode. A line pattern is stacked on the lower surface of the semiconductor substrate. An electrode pad is connected to the line pattern. The through electrode is connected to the line pattern.