SEMICONDUCTOR DEVICE AND THE FABRICATING METHOD THEREOF

摘要

Provided are a semiconductor device with an improved operation characteristic and a fabricating method thereof. The semiconductor device includes a first gate insulating layer formed on a substrate; a first barrier layer with a first thickness formed on the first gate insulating layer; a first work function control layer formed on the first barrier layer; and a second barrier layer with a second thickness which is thinner than the first thickness, formed on the first work function control layer.