| 摘要 |
<p>A method of depositing a material on a substrate using an atomic layer deposition (ALD) process, preferably a plasma enhanced atomic layer deposition (PEALD) or thermal ALD process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay of at least one minute between the first deposition step and the second deposition step. Each deposition step comprises a plurality of deposition cycles; each cycle may include starting by the introduction of a coating precursor into the chamber housing the substrate and ending with the introduction of a purge gas. The delay is introduced to the deposition process by prolonging a period of time for which a purge gas is supplied to a process chamber housing the substrate at the end of a selected one of the deposition cycles. The duration of the period of time for which purge gas is supplied to the chamber immediately prior to the commencement of the subsequent deposition cycle is greater than the duration of that period of time for each of the other deposition cycles. Suitable precursors include tetrakis dimethyl amino hafnium (TDMAHf, Hf(N(CH3)2)4) or titanium ispropoxide to generate hafnium oxide or titanium dioxide films respectively. The process may be useful in boosting the dielectric constant of an HfO2 film by an amount equivalent to some doping techniques.</p> |
