发明名称 THIN FILM LAMINATED BODY, THIN FILM MAGNETIC SENSOR USING THE THIN FILM LAMINATED BODY AND METHOD FOR MANUFACTURING THE THIN FILM LAMINATED BODY
摘要 <p>Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an Al x In 1 - x Sb mixed crystal layer formed on a substrate, and an InAs x Sb 1 - x (0 < x ‰¤ 1) thin film conducting layer directly formed on the Al x In 1 - x Sb layer, in which the Al x In 1 - x Sb mixed crystal layer is a layer that exhibits higher resistance than the InAs x Sb 1 - x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAs x Sb 1 - x thin film conducting layer, and the a lattice mismatch is+1.3% to -0.8%.</p>
申请公布号 EP2099083(B1) 申请公布日期 2014.09.03
申请号 EP20070832773 申请日期 2007.11.29
申请人 ASAHI KASEI KABUSHIKI KAISHA 发明人 SHIBASAKI, ICHIRO;GEKA, HIROTAKA;OKAMOTO, ATSUSHI
分类号 G01R33/07;H01L21/02;H01L29/201;H01L43/06;H01L43/08;H01L43/10;H01L43/12;H01L43/14 主分类号 G01R33/07
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