发明名称 |
MULTILAYER MIRROR FOR EUV LITHOGRAPHY AND PROCESS FOR PRODUCING SAME |
摘要 |
<p>Provided are a multilayer mirror for EUVL in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, and a process for its production. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at% of nitrogen and from 75 to 99.5 at% of Si is formed between the reflective layer and the protective layer.</p> |
申请公布号 |
EP2511945(A4) |
申请公布日期 |
2014.09.03 |
申请号 |
EP20100836046 |
申请日期 |
2010.12.09 |
申请人 |
ASAHI GLASS COMPANY, LIMITED |
发明人 |
MIKAMI, MASAKI;KOMAKINE, MITSUHIKO;IKUTA, YOSHIAKI |
分类号 |
G02B5/08;B82Y10/00;B82Y40/00;G03F1/24;G03F7/20 |
主分类号 |
G02B5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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