发明名称 A semiconductor device and method of manufacturing a semiconductor device
摘要 <p>A semiconductor structure with a waveguide, the semiconductor structure has a plurality of layers, at least one of which being partially laterally oxidised, said laterally oxidised material modifying the lateral effective refractive index with said structure in order to form a waveguide within the structure, the structure also has a quantum dot, said quantum dot being configured to emit photons into said waveguide, the waveguide being configured such that it guides the output from a single quantum dot.</p>
申请公布号 GB2478602(B) 申请公布日期 2014.09.03
申请号 GB20100004164 申请日期 2010.03.12
申请人 TOSHIBA RESEARCH EUROPE LIMITED 发明人 DAVID JULIAN PETER ELLIS;ANTHONY JOHN BENNETT;ANDREW JAMES SHIELDS
分类号 G02B6/136;G02F1/17;H01L29/12;H01S5/10 主分类号 G02B6/136
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