SAPPHIRE PROPERTY MODIFICATION THROUGH ION IMPLANTATION

摘要

Systems and methods for strengthening a sapphire part (100) are described herein. One method may take the form of orienting a first surface (101) of a sapphire member (100) relative to an ion implantation device, selecting an ion implantation concentration and directing ions (131) at the first surface (101) of the sapphire member (100). The ions (131) are embedded under the first surface (101) to create compressive stress in the sapphire surface (100).