| 摘要 |
An image sensor includes a light receiving device, an antireflection layer, a high refractive pattern, a color filter, and a microlens. The light receiving device is formed on a semiconductor substrate and generates a charge corresponding to incident light. The antireflection layer is formed on the upper side of the semiconductor substrate. The high refractive pattern is formed on the upper side of the antireflection layer while corresponding to the light receiving device. The color filter covers the upper side and the lateral side of the high refractive pattern and is formed on the upper side of the antireflection layer. The microlens is formed on the upper side of the color filter. The image sensor improves a high quality image by efficiently increasing the intensity of the light reaching the light receiving device even though the size of a unit pixel is small. |
