Semiconductor structure and method of manufacture

摘要

In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method to manufacture a semiconductor structure includes forming a cavity in a substrate. A portion of the substrate is doped, or a doped material is deposited over a portion of the substrate. At least a portion of the doped substrate or at least a portion of the doped material is converted to a dielectric material to enclose the cavity. The forming of the cavity may occur before or after the doping of the substrate or the depositing of the doped material. Other embodiments are described and claimed.

主权项

1. A method, comprising:
forming a cavity in a substrate to expose at least a portion of the substrate in the cavity; directly doping the exposed portion of the substrate to render a doped region of substrate in the cavity; etching at least one or more trenches in the cavity in the doped region of the substrate; and converting at least a portion of the doped region of the substrate to a dielectric material to seal at least one or more of the trenches in the cavity.