Semiconductor device and method of manufacturing the same

摘要

An electrode layer lies on a silicon carbide substrate in contact therewith and has Ni atoms and Si atoms. The number of Ni atoms is not less than 67% of the total number of Ni atoms and Si atoms. A side of the electrode layer at least in contact with the silicon carbide substrate contains a compound of Si and Ni. On a surface side of the electrode layer, C atom concentration is lower than Ni atom concentration. Thus, improvement in electrical conductivity of the electrode layer and suppression of precipitation of C atoms at the surface of the electrode layer can both be achieved.

主权项

1. A semiconductor device, comprising:
a silicon carbide substrate; and an electrode layer lying on said silicon carbide substrate in contact therewith and having Ni atoms and Si atoms, the number of said Ni atoms being not less than 67% of total number of said Ni atoms and said Si atoms at an interface of said electrode layer and said silicon carbide substrate, at least a side of said electrode layer in contact with said silicon carbide substrate containing a compound of Si and Ni, and on a surface side of said electrode layer, C atom concentration being lower than Ni atom concentration.