Passivation of aluminum nitride substrates

摘要

The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In certain embodiments, the method of protecting the substrate surface comprises forming a passivating layer on at least a portion of the substrate surface by performing a wet etch, which can comprise the use of one or more organic compounds and one or more acids. The invention also provides aluminum nitride substrates having passivated surfaces.

主权项

1. A substrate comprising an aluminum nitride single crystal wafer with a polished surface that is at least partially covered with a passivating layer having a content of surface bound oxygen, wherein greater than 60% of the surface bound oxygen, on a molar basis, is in the OH− state, and wherein the passivating layer is stable at room temperature and humidity such that oxidation of the polished surface covered with the passivating layer is prevented under such conditions.