| 发明名称 | Electrical fuse memory | ||
| 摘要 | A method of reading an eFuse in a column of eFuse memory cells includes electrically disconnecting a first end of the eFuse from a first electrical path. A second electrical path between a second end of the eFuse and a node is activated to bypass a third electrical path, where the third electrical path includes a diode device between the second end of the eFuse and the node. A footer coupled with the node is turned on. | ||
| 申请公布号 | US8824234(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US201313771674 | 申请日期 | 2013.02.20 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lin Sung-Chieh;Yen David;Liao Wei-Li;Huang Jiann-Tseng;Hsu Kuoyuan (Peter) |
| 分类号 | G11C17/16 | 主分类号 | G11C17/16 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A method of reading an eFuse in a column of eFuse memory cells, the method comprising: electrically disconnecting a first end of the eFuse from a first electrical path; activating a second electrical path between a second end of the eFuse and a node to bypass a third electrical path, the third electrical path comprising a diode device between the second end of the eFuse and the node; and turning on a footer coupled with the node. | ||
| 地址 | TW | ||