Self-referenced magnetic random access memory cells

摘要

The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.

主权项

1. A method for writing and reading a magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction formed from a sense layer having a magnetization direction that can be freely aligned, a storage layer having a magnetization direction that can be switched when the magnetic tunnel junction is heated to a high temperature threshold and that is pinned when the magnetic tunnel junction is at a low temperature threshold, and an insulating layer being disposed between the sense and a storage layers; a field line in communication with the magnetic tunnel junction; and a current line electrically connected to the magnetic tunnel junction; the method comprising :
during a write operation,
passing a saturation field current in the field line to induce a saturation magnetic field;saturating the magnetization of the sense layer in a direction according to the induced saturation magnetic field for inducing a local magnetic field; andswitching said magnetization of said storage layer according to the local magnetic field; and during a read operation,
aligning magnetization direction of said sense layer in a first aligned direction;comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction;aligning the magnetization of the sense layer in a second aligned magnetization direction;comparing said write data with said second aligned direction by measuring a second resistance value of said magnetic tunnel junction; and determining a difference between the first resistance value and the second resistance value.