Semiconductor device

摘要

Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films.

主权项

1. A semiconductor device comprising:
a first conductive film and a second conductive film over an insulating surface; a semiconductor film comprising an oxide semiconductor over and in contact with the first conductive film, and the second conductive film; a third conductive film over and in contact with the first conductive film; a fourth conductive film over and in contact with the second conductive film; an insulating film over the semiconductor film, the third conductive film, and the fourth conductive film; and a fifth conductive film provided in a position overlapping with the semiconductor film over the insulating film, wherein a length of the semiconductor film in a channel width direction is smaller than a length of each of the first conductive film and the second conductive film in the channel width direction, and wherein the length of the semiconductor film in the channel width direction is larger than a length of each of the third conductive film and the fourth conductive film in the channel width direction.