Magneto-resistance effect element, magnetic head assembly, magnetic recording and reproducing apparatus, and magnetic memory

摘要

According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.

主权项

1. A magneto-resistance effect element comprising:
a first electrode; a second electrode; a first magnetic layer provided between the first electrode and the second electrode; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer, the oxide layer including wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron, a lattice spacing of a (1 1 1) plane of the wustite crystal grains being not less than 0.253 nanometers and not more than 0.275 nanometers, wherein the oxide layer further includes wurtzite crystal grains with a (0 0 2) plane orientation containing zinc and having a portion overlapping with the wustite crystal grains when projected onto a plane parallel to a thickness direction of the oxide layer.