Light-emitting device and method of manufacturing the same

摘要

A light-emitting device and a method of manufacturing the same are provided. The light-emitting device includes a compound semiconductor structure having a first N-type compound semiconductor layer, an active layer, and a P-type compound semiconductor layer, a P-type electrode layer that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer, a plurality of insulation walls disposed at two sides of the compound semiconductor structure and the P-type electrode layer, a plurality of N-type electrode layers penetrating the plurality of insulation walls, and a conductive substrate on which a plurality of N-type electrode connecting layers respectively corresponding to a plurality of N-type electrode layers are separated from a P-type electrode connecting layer corresponding to the P-type electrode layer.

主权项

1. A method of manufacturing a light-emitting device, comprising:
forming a plurality of insulation walls on a substrate; forming a compound semiconductor structure and a P-type electrode layer in an interior space defined by the plurality of insulation walls; forming corresponding N-type electrode layers in the plurality of insulating walls; and attaching a conductive substrate in which a plurality of N-type electrode connecting layers are separated from a P-type electrode connecting layer, wherein the attaching of the conductive substrate comprises:
penetrating the conductive substrate to form a plurality of holes; andfilling each of the plurality of holes with an insulating material and forming a plurality of partition walls separating the P-type electrode connecting layer from the plurality of N-type electrode connecting layers.