发明名称 Light emitting device and electronic apparatus
摘要 A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.
申请公布号 US8822982(B2) 申请公布日期 2014.09.02
申请号 US201012722789 申请日期 2010.03.12
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Takayama Toru
分类号 H01L51/30 主分类号 H01L51/30
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A light emitting device comprising: a first substrate; a first insulating layer over the first substrate; a second insulating layer over the first insulating layer; a first transistor over the second insulating layer; a driver circuit comprising a second transistor over the second insulating layer; a third insulating layer over the driver circuit and the first transistor; a light emitting element over the third insulating layer, and comprising: a first electrode electrically connected to the first transistor, wherein an end portion of the first electrode is covered with a bank;an organic compound layer over the first electrode; anda second electrode over the organic compound layer, an organic material layer over and in direct contact with the second electrode; and a second substrate over the organic material layer with a space interposed between the second substrate and the organic material layer, wherein the second electrode covers an end portion of the bank.
地址 Kanagawa-ken JP