Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer

摘要

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb<1, where hb is a depth of the recess, rb is a width of a bottom portion of the recess, and Rb is a width of the protrusion.

主权项

1. A semiconductor light emitting device, comprising:
a first semiconductor layer including a layer of a first conductivity type and having a first major surface; a second semiconductor layer including a layer of a second conductivity type different from the first conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first major surface being on a side of the first semiconductor layer opposite to the light emitting layer, the first semiconductor layer having a plurality of structural bodies provided in the first major surface, each of the structural bodies being a recess provided on the first major surface with a protrusion provided between the structural bodies, or each of the structural bodies being a protrusion provided on the first major surface with a recess provided between the structural bodies, the structural bodies including a first structural body and a second structural body nearest the first structural body when viewed along a first axis perpendicular to the first major surface, a configuration of the first structural body when viewed along the first axis having a first centroid, a configuration of the second structural body when viewed along the first axis having a second centroid, the first centroid aligning with the second centroid along a second axis perpendicular to the first axis, and hb, rb, and Rb satisfying
rb/(2·hb)≦0.7, andrb/Rb<1, where
hb is a depth of the recess,rb is a width of a bottom portion of the recess along the second axis, andRb is a width of the protrusion along the second axis.