| 发明名称 | Contact structure of semiconductor device | ||
| 摘要 | The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a semiconductor layer on the sidewalls and bottom of the opening; a dielectric layer on the semiconductor layer; and a metal layer filling an opening of the dielectric layer. | ||
| 申请公布号 | US8823065(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US201213672258 | 申请日期 | 2012.11.08 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wang Sung-Li;Shih Ding-Kang;Lin Chin-Hsiang;Sun Sey-Ping;Wann Clement Hsingjen |
| 分类号 | H01L29/417;H01L29/43;H01L29/45 | 主分类号 | H01L29/417 |
| 代理机构 | Slater and Matsil, L.L.P. | 代理人 | Slater and Matsil, L.L.P. |
| 主权项 | 1. A contact structure for a semiconductor device comprising: a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a semiconductor layer on the sidewalls and bottom of the opening; a dielectric layer on the semiconductor layer; and a metal layer filling an opening of the dielectric layer. | ||
| 地址 | Hsin-Chu TW | ||