| 摘要 |
A wafer surface of a semiconductor wafer to be used as a device active region is mirror-polished, and an outer peripheral portion of the mirror-polished wafer surface is further polished, thereby forming an edge roll-off region between the device active region of the wafer surface and a beveled portion formed at the wafer edge. The edge roll-off region has a specific roll-off shape corresponding to an edge roll-off of the oxide film to be formed in a device fabrication process. Thus, a semiconductor wafer can be provided in which reduction in the thickness of an oxide film on the outer peripheral portion of the wafer in a CMP process can be prevented while maintaining high flatness of the wafer surface. |
