Tunable Schottky Diode with Depleted Conduction Path

摘要

A method of fabricating a Schottky diode having an integrated junction field-effect transistor (JFET) device includes forming a conduction path region in a semiconductor substrate along a conduction path of the Schottky diode. The conduction path region has a first conductivity type. A lateral boundary of an active area of the Schottky diode is defined by forming a well of a device isolating structure in the semiconductor substrate having a second conductivity type. An implant of dopant of the second conductivity type is conducted to form a buried JFET gate region in the semiconductor substrate under the conduction path region. The implant is configured to further form the device isolating structure in which the Schottky diode is disposed.

主权项

1. A method of fabricating a Schottky diode having an integrated junction field-effect transistor (JFET) device, the method comprising:
forming a conduction path region in a semiconductor substrate along a conduction path of the Schottky diode, the conduction path region having a first conductivity type; defining a lateral boundary of an active area of the Schottky diode by forming a well of a device isolating structure in the semiconductor substrate having a second conductivity type; and conducting an implant of dopant of the second conductivity type to form a buried JFET gate region in the semiconductor substrate below the conduction path region; wherein the implant is configured to further form the device isolating structure in which the Schottky diode is disposed.