SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of suppressing a standby current by adjusting the potential of a source line while considering the data holding characteristics of memory cells.SOLUTION: A semiconductor memory device comprises: a memory cell array in which static type memory cells are arranged; a source line potential adjustment circuit that is connected between a source line connected to a source of a drive transistor and a ground potential and that adjusts a potential to be applied to the source line; and a source line potential control circuit that controls the source line potential adjustment circuit to determine a potential which is between the ground potential and a power supply potential and which is of the source line at which data can be held in the memory cell during a standby period. The source line potential control circuit reads predetermined data written in a memory cell of the memory cell array after the standby period; and on the basis of the result of the reading, instructs the source line potential adjustment circuit to adjust the potential applied to the source line.