| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for etching a multilayer film including an organic film provided between a first oxide film and a second oxide film.SOLUTION: A high frequency power for generating plasma in a step (S2) of etching an organic film is higher than those in a step (S1) for etching a first oxide film and a step (S3) of etching a second oxide film. High frequency bias powers for attracting ions in the step (S1) and the step (S3) are higher than that in the second step (S2). In the step (S1), the step (S2) and the step (S3), a magnetic field is formed such that horizontal magnetic field components along a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak at a position far from the central axis line, and a position of the peak of the horizontal magnetic field components in the step (S2) is closer to the central axis line than positions of the peaks of the horizontal magnetic field components in the step (S1) and the step (S3). |
