发明名称 |
SUBSTRATE PROCESSING APPARATUS AND METHOD OF SUPPLYING AND EXHAUSTING GAS |
摘要 |
A substrate processing apparatus includes: a process chamber for processing a substrate; a substrate mounting member including a mounting surface on which a plurality of substrates are concentrically mounted with facing a ceiling of the process chamber; a rotation instrument for rotating the substrate mounting member in a direction parallel to the mounting surface; a gas supply unit and a gas exhaust unit which are disposed in the process chamber above the substrate mounting member upstream and downstream in the substrate mounting member rotating direction, respectively; and a controller for controlling the gas supply unit, the gas exhaust unit, and the rotation instrument to process the substrates, when the substrate passes through a predetermined region formed in the process chamber by the gas supply unit and the gas exhaust unit, by supplying a reactant gas from the gas supply unit and exhausting the reactant gas from the gas exhaust unit. |
申请公布号 |
US2014242810(A1) |
申请公布日期 |
2014.08.28 |
申请号 |
US201414191064 |
申请日期 |
2014.02.26 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
TAKANO Sataoshi |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing apparatus, comprising:
a process chamber configured to process a substrate; a substrate mounting member including amounting surface which is configured to concentrically mount a plurality of substrates and faces a ceiling of the process chamber; a rotation instrument configured to rotate the substrate mounting member in a direction parallel to the mounting surface; a gas supply unit disposed in the process chamber above the substrate mounting member upstream in a rotation direction of the substrate mounting member; a gas exhaust unit disposed in the process chamber above the substrate mounting member downstream in the substrate mounting member rotating direction; and a controller configured to control the gas supply unit, the gas exhaust unit, and the rotation instrument so as to process the substrate, when the substrate passes through a predetermined region formed in the process chamber by the gas supply unit and the gas exhaust unit, by supplying a reactant gas from the gas supply unit and exhausting the reactant gas from the gas exhaust unit. |
地址 |
Tokyo JP |