发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF SUPPLYING AND EXHAUSTING GAS
摘要 A substrate processing apparatus includes: a process chamber for processing a substrate; a substrate mounting member including a mounting surface on which a plurality of substrates are concentrically mounted with facing a ceiling of the process chamber; a rotation instrument for rotating the substrate mounting member in a direction parallel to the mounting surface; a gas supply unit and a gas exhaust unit which are disposed in the process chamber above the substrate mounting member upstream and downstream in the substrate mounting member rotating direction, respectively; and a controller for controlling the gas supply unit, the gas exhaust unit, and the rotation instrument to process the substrates, when the substrate passes through a predetermined region formed in the process chamber by the gas supply unit and the gas exhaust unit, by supplying a reactant gas from the gas supply unit and exhausting the reactant gas from the gas exhaust unit.
申请公布号 US2014242810(A1) 申请公布日期 2014.08.28
申请号 US201414191064 申请日期 2014.02.26
申请人 Hitachi Kokusai Electric Inc. 发明人 TAKANO Sataoshi
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A substrate processing apparatus, comprising: a process chamber configured to process a substrate; a substrate mounting member including amounting surface which is configured to concentrically mount a plurality of substrates and faces a ceiling of the process chamber; a rotation instrument configured to rotate the substrate mounting member in a direction parallel to the mounting surface; a gas supply unit disposed in the process chamber above the substrate mounting member upstream in a rotation direction of the substrate mounting member; a gas exhaust unit disposed in the process chamber above the substrate mounting member downstream in the substrate mounting member rotating direction; and a controller configured to control the gas supply unit, the gas exhaust unit, and the rotation instrument so as to process the substrate, when the substrate passes through a predetermined region formed in the process chamber by the gas supply unit and the gas exhaust unit, by supplying a reactant gas from the gas supply unit and exhausting the reactant gas from the gas exhaust unit.
地址 Tokyo JP