| 摘要 |
The invention concerns a method for forming nickel silicide or cobalt silicide comprising the steps consisting of: - exposing the surface of a substrate comprising silicon to an aqueous solution containing 0.1 mM to 10 mM of gold ions and 0.6 M to 3.0 M of fluorine ions for a time period of between 5 seconds and 5 minutes, - depositing a layer consisting essentially of nickel or of cobalt on the activated substrate by electroless means, - applying a rapid thermal treatment at a temperature of between 300°C and 750°C, so as to form nickel silicide or cobalt silicide. The aqueous solution contains a surfactant chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising 10 to 16 carbon atoms. This method can be applied, essentially, to the production of NAND memories and photovoltaic cells. |
