| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device manufacturing method which can manufacture a silicon carbide semiconductor device having a structure in which an impurity implantation region is comparatively deep and a whole length is long and clearance between impurity implantation regions is comparatively narrow with high accuracy.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises exposing a part in a surface part on one side in a thickness direction of the silicon carbide semiconductor substrate 11, where a P-type impurity implantation region 14 is formed and forming an implantation mask 15 for covering the remaining part. The implantation mask 15 includes a linear part having an aspect ratio fo 3.33 and more. when forming the implantation mask 15, at least the linear part includes a lower layer mask 12 and an upper layer mask 13. At this time, the lower layer mask 12 is formed from at least one of an oxide film and a nitride film and the upper layer mask 13 is formed from a resist film. |
